VGF InP (100) Zn doped, 2" x 0.35mm, wafer, 1sp Pouch Cell

VGF InP (100) Zn doped, 2" x 0.35mm, wafer, 1sp Pouch CellInP single crystal wafer Growing Method: VGF Orientation: (100) Size: 2" diameter x 0. 35 mm Doping: Zn doped Conducting type: S C Polish: one side polished Resistivity: (5. 61 6. 84)E 2 ohm. cm Mobility: 81 85 cmE2 V. S EPD: < 5000 cmE2 Carrier Concerntration: (1. 09 1. 37) E18 cm^3 Ra(Average Roughness) : < 0. 4 nm

EQ-MTS01 is a Labview Based Temperature Control software tool to allow temp

Features Economic blades

Please keep the thermal gradient less than 100oC/ minute to avoid cracking

Common Dimensions: A = 2

Cathode Die (mm): 57 L x 44 W with the protrude current collector of 10 L x 5 W (Pic

be careful not cutting the gloves

4H-SiC (0001) Prime grade

Packing:                      packed in plastic bag with vacuum

Surface Polishing:              Both  sides  polished

660 V~50KA Current  50 A  Dimension  43 x 43 mm

Polishing:      Two sides   polished

With Four secure fixtures