Ge Substrate: (100) 5x5 x 0.5 mm , 1SP, P type Ga doped,R:1-5 ohm.cm YSZ (Yittrium stabilized ZrO2)

Ge Substrate: (100) 5x5 x 0.5 mm , 1SP, P type Ga doped,R:1-5 ohm.cm YSZ (Yittrium stabilized ZrO2)Ge Wafer Specification Growing Method: CZ Wafer Size: 5 x 5 x0. 5 mm Surface Polishing: one side epi polished Orientation: (100) Surface roughness: RMS or Ra:~ 10 A(By AFM) Doping: Ga doped Conductor type: P type Resistivity: 1 5 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room in wafer container Related Product Other Crystal wafer

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Flow Rate:           CFM: 780

If a power failure occurs during testing

For calculating the actual pressure applied to your working piece

2nm(by AFM)

Click the video below to see the battery anode coated

sulfuric acid and light-sensitive chemicals

Density:                           5

Independent temp inputs

Orientation tolerance: +/-0

Pressing die

- Pic 1   - Pic 2      Input Voltage Spin Coater: 24 VDC with 100 - 240 VAC power adapter