GaAs, VGF Grown (110) ori. N type, Si-doped, 10 x 5 x 0.3 mm, 2sp Orientation 001

GaAs, VGF Grown (110) ori. N type, Si-doped, 10 x 5 x 0.3 mm, 2sp Orientation 001GaAs single crystal wafer Growing Method: VGF Orientation: (110) Size: 10 x 5 x 0. 35 mm Polishing: Two sides polished Doping: Si doped Conductor type: S C N Carrier Concentration: (2. 4 3. 27)x10E18 cm^3 Mobility: 1630 1870 cm^2 V. S Resistivity :( 1. 17 1. 4)x10^ 3 ohm. cm Ra(Average Roughness) : < 0. 4 nm Note: EPI ready wafers Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces

35 mm thickness and 0

The specially designed demolding is used to de-mold 32 samples at the same time

click the picture below to see how to install

Coulombic efficiency

Less than 5mg/m2

Glove Box Compatibility

(installed in Aluminum plate) 2 set UP820-04 8" dia x 0

4 +/- 1 mm) I

Heating Zone Length

Fabrication Method: Electrodeposition of Silver on Nickel Foam Substrate

The result is accurate and repeatable readings

In order to get a high density of the sample