MgO (100) Epi polishing wafer 1" Dia x0.5mm, 2SP - MGa25D05C2 Muffle Furnace

MgO (100) Epi polishing wafer 1" Dia x0.5mm, 2SP - MGa25D05C2 Muffle FurnaceSpecifications of MgO substrate Size: 1" diameter x 0. 5mm + _ 0. 05 mm Orientation: (100) + 0. 5 Deg Polish: Two sides EPI polished by CMP technology with minimum sub surface damage. Surface finish (RMS or Ra): <10A Packing: The substrate is packed with 100 grade clean plastic bag under 1000 class clean room Precautions: MgO is sensitive to moisture, and must be stored in vacuum box. Warning: MgO crystal was grown by arc melting method and nature

Film Speification

Aluminum foil (JIS A8021):                       0

Structure:                             Cubic

which is a narrow gap layered semiconductor with a hexagonal structure

Nominal Thickness             300+/- 25 microns

and not covered by a warranty

and coated battery electrode sheet

Mobility:                             1850-1870 cmE2/V

Pressure (kg/cm2)

38 Array (Capacity):       40*40 =1600

powder screened to 200 MESH Melting point / Melting range 900 - 975° C  SDS XRD File Package 50 grams units in a glass container

vacuum pressure -0