+ 0. 5`o Wafer size: 3" dia x 0. 5 mm thickness One side Epi polished Polished surface: Wafer surface is EPI polished via a special CMP procedure. Ra <5A Package: Each wafer is packed in 1000 class clean room with 100 grade plastic bag with wafer container Typical Properties: Crystal Structure: Hexagonal. a=4. 758 Angstroms c=12. 99 Angstroms Melting Point: 2040 degree C Density: 3. 97 gram cm2 Growth"> + 0. 5`o Wafer size: 3" dia x 0. 5 mm thickness One side Epi polished Polished surface: Wafer surface is EPI polished via a special CMP procedure. Ra <5A Package: Each wafer is packed in 1000 class clean room with 100 grade plastic bag with wafer container Typical Properties: Crystal Structure: Hexagonal. a=4. 758 Angstroms c=12. 99 Angstroms Melting Point: 2040 degree C Density: 3. 97 gram cm2 Growth"> + 0. 5`o Wafer size: 3" dia x 0. 5 mm thickness One side Epi polished Polished surface: Wafer surface is EPI polished via a special CMP procedure. Ra <5A Package: Each wafer is packed in 1000 class clean room with 100 grade plastic bag with wafer container Typical Properties: Crystal Structure: Hexagonal. a=4. 758 Angstroms c=12. 99 Angstroms Melting Point: 2040 degree C Density: 3. 97 gram cm2 Growth"> Al2O3- Sapphire Wafer, M Plane (10-10) 3"Dia x 0.5 mm wafer, 1SP - ALM76D05C1 Battery Cell Tester Since August 1 – biztobiznetworking.com

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Al2O3- Sapphire Wafer, M Plane (10-10) 3"Dia x 0.5 mm wafer, 1SP - ALM76D05C1 Battery Cell Tester Since August 1

$204.12

Quantity
Description

Since August 1

61 Array (Capacity):   6*16 =250

Crystal structure:   CCP

UL certified 110VAC - 240VAC to 24VDC power adaptor is included

One 3" I

Al2O3- Sapphire Wafer, M Plane (10-10) 3"Dia x 0.5 mm wafer, 1SP - ALM76D05C1 Battery Cell Tester Since August 1Specifications: Orientation: M Plane, <10 10> + 0. 5`o Wafer size: 3" dia x 0. 5 mm thickness One side Epi polished Polished surface: Wafer surface is EPI polished via a special CMP procedure. Ra <5A Package: Each wafer is packed in 1000 class clean room with 100 grade plastic bag with wafer container Typical Properties: Crystal Structure: Hexagonal. a=4. 758 Angstroms c=12. 99 Angstroms Melting Point: 2040 degree C Density: 3. 97 gram cm2 Growth

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